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| SI7948DP New Product Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.075 @ VGS = 10 V 0.100 @ VGS = 4.5 V ID (A) 4.6 4.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings Package APPLICATIONS D Automotive - ABS - Coil Driver - Load Switch D1 D2 PowerPAKr SO-8 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: SI7948DP-T1 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 60 "20 4.6 3.6 15 2.7 15 11 3.3 2.1 Steady State Unit V 3.0 2.4 A 1.2 mJ 1.4 0.9 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72403 S-31867--Rev. A, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 29 60 4.0 Maximum 38 85 5.2 Unit _C/W C/W 1 SI7948DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.0 A VDS = 15 V, ID = 4.6 A IS = 2.7 A, VGS = 0 V 15 0.060 0.080 6 0.8 1.2 0.075 0.100 1 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resostamce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 30 V, RL = 2 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 15 A 12 2 3.5 1.5 7 8 15 7 30 20 25 40 20 60 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 thru 4 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 15 Transfer Characteristics 9 9 6 3V 3 6 TC = 125_C 3 25_C -55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72403 S-31867--Rev. A, 15-Sep-03 2 SI7948DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.12 r DS(on) - On-Resistance ( W ) 0.10 C - Capacitance (pF) VGS = 4.5 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 0 3 6 9 12 15 Vishay Siliconix On-Resistance vs. Drain Current 800 700 600 500 400 300 200 100 0 0 4 Crss Capacitance Ciss Coss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 15 A 16 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 20 24 Qg - Total Gate Charge (nC) 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 12 8 4 r DS(on) - On-Resistance ( W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.200 0.175 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.150 0.125 0.100 0.075 0.050 0.025 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.6 A TJ = 25_C 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72403 S-31867--Rev. A, 15-Sep-03 www.vishay.com 3 SI7948DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 80 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 20 -0.8 -1.0 -50 0 0.001 ID = 250 mA Power (W) 60 TA = 25_C Single Pulse 100 Single Pulse Power 40 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case IDM Limited 10 ms 10 I D - Drain Current (A) rDS(on) Limited 100 ms 1 ms 10 ms 1 0.1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 1 10 100 ms 1s 10 s dc, 100 S 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72403 S-31867--Rev. A, 15-Sep-03 SI7948DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 72403 S-31867--Rev. A, 15-Sep-03 www.vishay.com 5 |
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